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| Datasheet File OCR Text: |
| MS3011 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS Features * * * * * * 2.0 GHz POUT = 30.0 dBm GP = 7.0 dB MINIMUM 15:1 VSWR @ RATED CONDITIONS GOLD METALIZATION COMMON EMITTER CONFIGURATION The MS3011 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. DESCRIPTION: ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol PDISS VCE IC TJ TSTG Power Dissipation Device Current Junction Temperature Storage Temperature Parameter Value 5.5 20 500 200 -65 to +200 Unit W V mA C C Collector-Emitter Bias Voltage Thermal Data RTH(J-C) 12-10-2002 Thermal Resistance Junction-case 17 C/W MS3011 STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25 C) (Tcase 25 Symbol BVCBO BVEBO BVCEO ICEO HFE IC = 1mA IE = 1mA IC = 5mA VCE = 18V VCE = 5V IC = 250mA Test Conditions IE = 0mA IC = 0mA IB = 0mA Min. 50 20 --15 3.5 Value Typ. ----------- Max. ------1.0 120 Unit V V V mA --- DYNAMIC Symbol GP +GP COB Conditions f = 2.0GHz f = 2.0GHz f = 1 MHz VCE = 18V Test Conditions POUT = 30.0 dBm POUT = 30.0 dBm VCB = 28V IC = 220mA +POUT = 10dB Min. 7.0 ----- Value Typ. ------- Max. --1.0 5.0 Unit dB dB pf 12-10-2002 MS3011 PACKAGE MECHANICAL DATA 12-10-2002 |
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